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this is information on a product in full production. november 2012 doc id 15732 rev 3 1/17 17 stf10n65k3, stfi10n65k3, STP10N65K3 n-channel 650 v, 0.75 typ., 10 a zener-protected supermesh3? power mosfet in to-220fp, i 2 pakfp and to-220 packages datasheet ? production data features 100% avalanche tested extremely high dv/dt capability gate charge minimized very low intrinsic capacitances improved diode reverse recovery characteristics zener-protected applications switching applications description these supermesh3? power mosfets are the result of improvements applied to stmicroelectronics? supermesh? technology, combined with a new optimized vertical structure. these devices boast an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. figure 1. internal schematic diagram order codes v ds r ds(on) max i d p tot stf10n65k3 650 v 1 10 a 35 w stfi10n65k3 STP10N65K3 150 w to-220 to-220fp i 2 pakfp 1 2 3 1 2 3 tab '7$% * 6 am01476v1 table 1. device summary order codes marking package packaging stf10n65k3 10n65k3 to-220fp tube stfi10n65k3 i 2 pakfp STP10N65K3 to-220 www.st.com
contents stf10n65k3, stfi10n65k3, STP10N65K3 2/17 doc id 15732 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
stf10n65k3, stfi10n65k3, STP10N65K3 electrical ratings doc id 15732 rev 3 3/17 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220fp i 2 pakfp to-220 v ds drain source voltage 650 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 c 10 a i d drain current (continuous) at t c = 100 c 6.3 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 40 a p tot total dissipation at t c = 25 c 35 150 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 7.2 a e as single pulse avalanche energy (2) 2. starting t j = 25 c, i d = i ar , v dd = 50 v 212 mj derating factor 0.28 1.2 w/c dv/dt (3) 3. i sd 10 a, di/dt = 100 a/s, v peak < v (br)dss peak diode recovery voltage slope 12 v/ns esd gate-source human body model (r = 1.5 k , c = 100 pf) 2.8 kv v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit to-220fp i 2 pakfp to-220 r thj-case thermal resistance junction-case max 3.57 0.83 c/w rt hj-amb thermal resistance junction-ambient max 62.5 c/w
electrical characteristics stf10n65k3, stfi10n65k3, STP10N65K3 4/17 doc id 15732 rev 3 2 electrical characteristics (tcase = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4.5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 3.6 a 0.75 1 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 1180 125 14 - pf pf pf c oss eq. equivalent output capacitance v ds = 0 to 520 v, v gs = 0 - 77 - pf r g intrinsic gate resistnce f=1 mhz open drain - 3 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 7.2 a, v gs = 10 v (see figure 18 ) - 42 7.4 23 - nc nc nc
stf10n65k3, stfi10n65k3, STP10N65K3 electrical characteristics doc id 15732 rev 3 5/17 the built-in back-to-back zener diodes have been specifically designed to enhance not only the device?s esd capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. in this respect, the zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. the integrated zener diodes thus eliminate the need for external components. table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 310 v, i d = 3.5 a, r g = 4.7 , v gs = 10 v (see figure 17 ) - 14.5 14 44 35 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 7.2 28.8 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 7 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 7 a, di/dt = 100a/s v dd = 60 v (see figure 22 ) - 320 2 13 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 7 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 22 ) - 410 2.9 14 ns c a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate-source breakdown voltage igs= 1 ma, i d =0 30 - - v
electrical characteristics stf10n65k3, stfi10n65k3, STP10N65K3 6/17 doc id 15732 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220fp and i 2 pakfp figure 3. thermal impedance for to-220fp and i 2 pakfp i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e am0 3 922v1 figure 4. safe operating area for to-220 figure 5. thermal impedance for to-220 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 1 s 10 s 10 s 1m s tj=150c tc=25c s inlge p u l s e 10m s am15460v1 figure 6. output characteristics figure 7. transfer characteristics i d 6 4 2 0 0 10 v d s (v) 20 (a) 8 10 5v 6v 7v v g s =10v 12 14 16 1 8 am0 3 92 3 v1 i d 3 2 1 0 1 4 v g s (v) 8 (a) 2 6 4 5 3 5 7 9 6 7 8 9 10 11 12 v d s = 15 v am0 3 924v1
stf10n65k3, stfi10n65k3, STP10N65K3 electrical characteristics doc id 15732 rev 3 7/17 figure 8. normalized bv dss vs temperature figure 9. static drain-source on resistance figure 10. output capacitance stored energy figure 11. capacitance variations figure 12. gate charge vs gate-source voltage figure 13. normalized on-resistance vs temperature bv d ss -75 -25 t j (c) (norm) -50 75 25 50 100 0.90 0.95 1.00 1.05 1.10 125 150 0 i d = 1 ma am0 3 925v1 r d s (on) 0.75 0.70 0.65 0.60 0 2 i d (a) ( ) 1 3 0. 8 0 0. 8 5 0.90 0.95 4 5 6 7 v g s = 10 v am0 3 926v1 e o ss 3 2 1 0 0 100 v d s (v) ( j) 400 4 200 3 00 5 6 500 600 7 8 am0 3 929v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am0 3 92 8 v1 v g s 6 4 2 0 0 10 q g (nc) (v) 40 8 20 3 0 10 v dd =520v i d =7a 50 12 3 00 200 100 0 400 500 v d s (v) am0 3 927v1 r d s (on) 2.0 1.5 1.0 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 125 150 2.5 0.0 i d = 1.2 a am0 3 9 3 1v1
electrical characteristics stf10n65k3, stfi10n65k3, STP10N65K3 8/17 doc id 15732 rev 3 figure 14. normalized gate threshold voltage vs temperature figure 15. maximum avalanche energy vs temperature figure 16. source-drain diode forward characteristics v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 125 150 i d = 100 a am0 3 9 3 0v1 e a s 0 40 t j (c) (mj) 20 100 60 8 0 0 20 40 60 8 0 120 140 100 120 140 160 1 8 0 200 220 i d =7.2 a v dd =50 v am0 3 9 33 v1 v s d 0 2 i s d (a) (v) 1 5 3 4 0.4 0.5 0.6 0.7 0. 8 0.9 t j =-50c t j =150c t j =25c 8 6 7 0. 3 am0 3 9 3 2v1
stf10n65k3, stfi10n65k3, STP10N65K3 test circuits doc id 15732 rev 3 9/17 3 test circuits figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive waveform figure 22. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data stf10n65k3, stfi10n65k3, STP10N65K3 10/17 doc id 15732 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
stf10n65k3, stfi10n65k3, STP10N65K3 package mechanical data doc id 15732 rev 3 11/17 table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
package mechanical data stf10n65k3, stfi10n65k3, STP10N65K3 12/17 doc id 15732 rev 3 figure 23. to-220fp drawing 7012510_rev_k_b
stf10n65k3, stfi10n65k3, STP10N65K3 package mechanical data doc id 15732 rev 3 13/17 figure 24. i 2 pakfp drawing table 10. i 2 pakfp mechanical data dim. mm min. typ. max. a4.40 - 4.60 b2.50 2.70 d2.50 2.75 d1 0.65 0.85 e0.45 0.70 f0.75 1.00 f1 1.20 g4.95 5.20 h 10.00 10.40 l1 21.00 23.00 l2 13.20 14.10 l3 10.55 10.85 l4 2.70 3.20 l5 0.85 1.25 l6 7.30 7.50 rev!
package mechanical data stf10n65k3, stfi10n65k3, STP10N65K3 14/17 doc id 15732 rev 3 table 11. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
stf10n65k3, stfi10n65k3, STP10N65K3 package mechanical data doc id 15732 rev 3 15/17 figure 25. to-220 type a drawing 00159 88 _typea_rev_ s
revision history stf10n65k3, stfi10n65k3, STP10N65K3 16/17 doc id 15732 rev 3 5 revision history table 12. document revision history date revision changes 30-jun-2009 1 first release 14-nov-2011 2 updated mechanical data and section 2.1: electrical characteristics (curves) . minor text changes. 14-nov-2012 3 ? added: i 2 pakfp and to-220 ? deleted: t i row ? added: r ds(on) typical value, figure 4 and 5 ? modified: figure 2 ? updated: section 4: package mechanical data
stf10n65k3, stfi10n65k3, STP10N65K3 doc id 15732 rev 3 17/17 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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